ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,990, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory device and method of operating the same" was invented by Meng-Sheng Chang (Chubei, Taiwan) and Ku-Feng Lin (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of memory cells including a first memory cell and a second memory cell, a first bit line connected to the first memory cell, a second bit line connected to the second memory cell, a first word line connected to the first and second memory cells, a first control transistor connected to the first bit line, a second control transistor c...