ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,139, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Manufacturing method of semiconductor device" was invented by Chi-Ming Chen (Hsinchu County, Taiwan), Kuei-Ming Chen (New Taipei, Taiwan), Po-Chun Liu (Hsinchu, Taiwan), Chung-Yi Yu (Hsin-Chu, Taiwan) and Chia-Shiung Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes at least the following steps. A sacrificial substrate is provided. An epitaxial layer is formed on the sacrificial substrate. An etch stop layer is formed on the epitaxial layer. Carbon atoms are implanted in...