US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 15 for "Integrated circuit structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,176, issued on April 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit structure and method for forming the same" was invented by Yi-Wen Pan (New Taipei, Taiwan) and Chung-Chi Ko (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit structure includes a substrate, a transistor, a first dielectric layer, a metal contact, a first low-k dielectric layer, a second dielectric layer, and a first metal feature. The transistor is over the substrate. The first dielectric layer is over the transistor. The metal contact is in the first dielectric layer and electricall...