ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,414, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit and manufacturing method thereof" was invented by Katherine H Chiang (New Taipei, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a substrate, a first transistor, and an interconnect structure. The first transistor is over the substrate. The interconnect structure is disposed on the substrate and includes a first dielectric layer and a memory module. The memory module includes a first memory device, a second memory device, and a third memory device. The first...