US Patent Issued to Taiwan Semiconductor Manufacturing on April 15 for "Fin field-effect transistor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,146, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device and method of forming the same" was invented by Che-Yu Lin (Hsinchu, Taiwan), Chien-Wei Lee (Kaohsiung, Taiwan), Chien-Hung Chen (Hsinchu, Taiwan), Wen-Chu Hsiao (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean th...