ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,253, issued on April 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Backside diode design" was invented by Kuo-Chin Huang (Yilan, Taiwan), Tzu-Jui Wang (Fengshan, Taiwan), Hua-Mao Chen (Tainan, Taiwan), Chin-Chia Kuo (Tainan, Taiwan) and Yuichiro Yamashita (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device that includes a first die bonded to a second die with interconnect structures in the first die. The first die includes a photodiode having first and second electrodes on a first side of a first dielectric layer, and first, second, and third int...