US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 1 for "Semiconductor structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,653, issued on April 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and methods of forming the same" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first semiconductor device formed over a substrate. The first semiconductor device includes a first source/drain feature over the substrate, a first gate structure over the substrate, a first conductive feature over the first source/drain feature, and a first insulation layer between the first g...