US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 1 for "Semiconductor device structure having gate dielectric layer" (Taiwanese, American Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,543, issued on April 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure having gate dielectric layer" was invented by I-Ming Chang (ShinChu, Taiwan), Chih-Cheng Lin (Taipei, Taiwan), Chi-Ying Wu (Hsinchu, Taiwan), Wei-Ming You (Taipei, Taiwan), Ziwei Fang (Hsinchu, Taiwan) and Huang-Lin Chao (Oregon, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the...