US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 1 for "Selective dual silicide formation using a maskless fabrication process flow" (Taiwanese Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,709, issued on April 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Selective dual silicide formation using a maskless fabrication process flow" was invented by Mrunal A. Khaderbad (Hsinchu, Taiwan), Pang-Yen Tsai (Jhubei, Taiwan) and Yasutoshi Okuno (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first dielectric layer is selectively formed such that the first dielectric layer is formed over a source/drain region of a first type of transistor but not over a source/drain region of a second type of transistor. The first type of transistor and the second type of transistor have different types of c...