ALEXANDRIA, Va., April 2 -- United States Patent no. 12,268,027, issued on April 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Middle-of-line interconnect structure and manufacturing method" was invented by Yu-Lien Huang (Jhubei, Taiwan), Ching-Feng Fu (Taichung, Taiwan) and Huan-Just Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, the present disclosure relates to an integrated circuit device. A transistor structure is disposed over a substrate and includes a pair of source/drain regions and a gate electrode between the pair of source/drain regions. A lower inter-layer dielectric (ILD) layer is disposed over the pair of source/dra...