ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,565, issued on April 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Integrated chip with an etch-stop layer forming a cavity" was invented by Hsi-Wen Tien (Xinfeng Township, Taiwan), Chung-Ju Lee (Hsinchu, Taiwan), Chih Wei Lu (Hsinchu, Taiwan), Hsin-Chieh Yao (Hsinchu, Taiwan), Shau-Lin Shue (Hsinchu, Taiwan), Yu-Teng Dai (New Taipei, Taiwan) and Wei-Hao Liao (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip. The integrated chip comprises a dielectric layer over a substrate. A first metal feature is over the dielectric layer. A second metal featu...