US Patent Issued to Taiwan Semiconductor Manufacturing on April 1 for "Deep trench isolation structure and method of making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,577, issued on April 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Deep trench isolation structure and method of making the same" was invented by Hung-Ling Shih (Tainan, Taiwan), Tsung-Yu Yang (Tainan, Taiwan), Yun-Chi Wu (Tainan, Taiwan) and Po-Wei Liu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure can include a high voltage region, a first moat trench isolation structure electrically insulating the high voltage region from low voltage regions of the semiconductor structure, and a second moat trench isolation structure electrically insulating the high voltage region from...