US Patent Issued to Taiwan Semiconductor Manufacturing on April 1 for "Capacitor device with multi-layer dielectric structure" (Taiwanese Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,681, issued on April 1, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Capacitor device with multi-layer dielectric structure" was invented by Yu-En Jeng (Taichung, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan), Cheng-Hao Hou (Hsinchu, Taiwan), Chen-Chiu Huang (Taichung, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures of a semiconductor device structure are provided. The semiconductor device structure includes a first insulating layer formed over a semiconductor substrate and an interconnect structure formed in the first insulating layer. The semiconductor device struc...