US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD ., NATIONAL TAIWAN UNIVERSITY on Oct. 21 for "Memory device and formation method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,175, issued on Oct. 21, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD . (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device and formation method thereof" was invented by Jih-Chao Chiu (New Taipei, Taiwan), Ya-Jui Tsou (Taichung, Taiwan), Wei-Jen Chen (Tainan, Taiwan), Chee-Wee Liu (Taipei, Taiwan), Shao-Yu Lin (Taichung, Taiwan) and Chih-Lin Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a...