US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on Sept. 23 for "Current-distributing pin structure and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,423,495, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Current-distributing pin structure and method of forming same" was invented by Huaixin Xian (Hsinchu, Taiwan), Zhang-Ying Yan (Hsinchu, Taiwan), Jibao Zhang (Hsinchu, Taiwan) and Qingchao Meng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A current-distributing structure in an integrated circuit (IC) includes a substrate; and first and second active regions on the substrate. First and second sets of gate structures correspondingly overlap the first and second active regions. A ...