US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on Oct. 7 for "Method for intra-cell-repurposing dummy transistors and semiconductor device having repurposed formerly dummy transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,136, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Method for intra-cell-repurposing dummy transistors and semiconductor device having repurposed formerly dummy transistors" was invented by Yiyun Huang (Hsinchu, Taiwan), Zhang-Ying Yan (Hsinchu, Taiwan), Liu Han (Hsinchu, Taiwan) and Qingchao Meng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In some embodiments, a method of generating a cell in a layout diagram includes: selecting a cell from a library of standard cells, components of the cell defining an active circuit; identifyi...