US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on Nov. 4 for "Trench etching process for photoresist line roughness improvement" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,035, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Trench etching process for photoresist line roughness improvement" was invented by Sheng-Lin Hsieh (Hsinchu, Taiwan), I-Chih Chen (Hsinchu, Taiwan), Ching-Pei Hsieh (Hsinchu, Taiwan) and Kuan Jung Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device structure includes forming a first resist structure over a hard mask. The method further includes patterning the first resist structure to form a trench therein. The method further includes perfo...