ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,659, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Semiconductor device with T-shaped active region and methods of forming same" was invented by Huaixin Xian (Hsinchu, Taiwan), Zhang-Ying Yan (Hsinchu, Taiwan) and Qingchao Meng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a cell region including active regions that extend in a first direction and have components of corresponding transistors formed therein; a first majority of the active regions being rectangular; a first one of the active regions...