US Patent Issued to Taiwan Semiconductor Manufacturing, TSMC Nanjing on July 15 for "Memory device and operating method thereof" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,000, issued on July 15, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan) and TSMC Nanjing Co. Ltd. (Jiangsu Province, China).

"Memory device and operating method thereof" was invented by Jun-Cheng Liu (Nanjing, China), Zhi-Min Zhu (Nanjing, China), Chien-Yu Huang (Taoyuan, Taiwan) and Ching-Wei Wu (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided, including at least one bit cell, a pair of transistors, and a voltage generation circuit. The voltage generation circuit is coupled to the negative voltage line and is configured to pull down a voltage of at least one of the pair ...