ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,010, issued on July 15, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).
"Memory circuit and method of operating same" was invented by Luping Kong (Hsinchu, Taiwan), Chia-Cheng Chen (Hisnchu, Taiwan), Ching-Wei Wu (Hsinchu, Taiwan) and Jun Xie (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a control circuit coupled to the word line driver circuit. The control circuit is configured to delay a leading or falling edge of a word line signal in response to at least a first clock signal. The control circuit includes a first clock circ...