US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING on Dec. 30 for "Method of manufacturing a replacement metal gate device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,323, issued on Dec. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC NANJING COMPANY Ltd. (Nanjing, China).

"Method of manufacturing a replacement metal gate device structure" was invented by Min Han Hsu (Hsinchu, Taiwan) and Jung-Chih Tsao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device includes forming a dummy gate structure over a semiconductor fin. The dummy gate structure includes a dummy gate stack and gate spacers along sidewalls of the dummy gate stack. The method further includes forming an inter-layer dielectric (ILD) layer surround...