US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC NANJING, TSMC CHINA on Sept. 9 for "Static random access memory with adaptive precharge signal generated in response to tracking operation" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,625, issued on Sept. 9, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan), TSMC NANJING COMPANY Ltd. (Nanjing, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).

"Static random access memory with adaptive precharge signal generated in response to tracking operation" was invented by Xiu-Li Yang (Shanghai), He-Zhou Wan (Shanghai), Lu-Ping Kong (Nanjing, China) and Wei-Yang Jiang (Jiangshan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device is provided. The device includes multiple transistors, a first sense circuit, and a precharge circuit. The transistors are coupled to a tracking bit line and configured to genera...