US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC CHINA on May 27 for "Semiconductor device and manufacturing method thereof" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,530, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).

"Semiconductor device and manufacturing method thereof" was invented by Feng Han (Shanghai), Lei Shi (Shanghai), Hung-Chih Tsai (Kaohsiung County, Taiwan), Liang-Yu Su (Yunlin County, Taiwan) and Hang Fan (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a doped region of a first conductivity type in a substrate, a source/drain region of the first conductivity in the doped region, and a gate structure overlapping a portion of the doped region. The semiconductor device furt...