US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC CHINA on Jan. 13 for "Semiconductor device with doped region between gate and drain" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,025, issued on Jan. 13, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).

"Semiconductor device with doped region between gate and drain" was invented by Lian-Jie Li (Shanghai), Yan-Bin Lu (Shanghai), Feng Han (Shanghai) and Shuai Zhang (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure, a drift region, a source region, a drain region, a first doped region, and a second doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of...