US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC CHINA on Aug. 5 for "Semiconductor device and forming method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,649, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).

"Semiconductor device and forming method thereof" was invented by Feng Han (Shanghai), Jian Huang (Shanghai), Lin-Chun Gui (Shanghai) and Zhong-Hao Chen (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate structure over a substrate; forming a first gate spacer and a second gate spacer on opposite sidewalls of the gate structure, respectively; implanting a first dopant of a first conductivity type into the substrate form a lightly doped source region adjacent to the first...