US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, TSMC CHINA on April 8 for "Method of making electrostatic discharge protection cell and antenna integrated with through silicon via" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,658, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsicnhu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).

"Method of making electrostatic discharge protection cell and antenna integrated with through silicon via" was invented by HoChe Yu (Hsinchu, Taiwan), Fong-Yuan Chang (Hsinchu, Taiwan), XinYong Wang (Hsinchu, Taiwan), Chih-Liang Chen (Hsinchu, Taiwan) and Tzu-Heng Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device includes manufacturing an ESD cell over a substrate, wherein the ESD cell includes multiple diodes connected in parallel to each other...