ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,590, issued on April 22, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and TSMC CHINA COMPANY Ltd. (Shanghai).
"Integrated circuit and manufacturing method thereof" was invented by Xin-Yong Wang (Shanghai), Li-Chun Tien (Tainan, Taiwan) and Chih-Liang Chen (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first transistor, a second transistor, a first power line, and a second power line. The first transistor has a first active region and a first gate structure, in which the first active region has a source region and a drain region on opposite sides of the first gate s...