ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,305, issued on Sept. 9, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan) and National Yang Ming Chiao Tung University (Hsinchu, Taiwan).
"Transistor, memory device and manufacturing method of memory device" was invented by Po-Tsun Liu (Hsinchu, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Zhen-Hao Li (Tainan, Taiwan), Tsung-Che Chiang (Taoyuan, Taiwan), Bo-Feng Young (Taipei, Taiwan), Hsin-Yi Huang (Taichung, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a first semiconductor layer, a second semiconductor layer, a semico...