ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,941, issued on Sept. 30, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL YANG MING CHIAO TUNG UNIVERSITY (Hsinchu, Taiwan).

"Capacitor and method for forming the same" was invented by Hsin-Cheng Lin (Taipei, Taiwan), Chia-Che Chung (Hsinchu, Taiwan) and Chee-Wee Liu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The method includes forming a sacrificial multi-layer stack including alternating first sacrificial layers and second sacrificial layers stacked in a vertical direction on a substrate; removing the first sacrificial layers to form first spaces each interposing two of the second ...