ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,808, issued on Oct. 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).

"Memory device and operating method thereof" was invented by Yen-Cheng Chiu (Pingtung County, Taiwan), Win-San Khwa (Taipei, Taiwan) and Meng-Fan Chang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a current source and a memory array. The current source is configured to provide a current to a first node. The memory array is coupled to the current source at the first node. The memory array includes memory cells. First terminals of the memory cells are c...