ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,504, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).
"One-time-programmable memory devices" was invented by Chrong Jung Lin (Hsinchu, Taiwan), Ya-Chin King (Hsinchu, Taiwan) and Li-Yu Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array comprising a plurality of one-time-programmable (OTP) memory cells. Each of the plurality of OTP memory cells comprises a select transistor, a diode, and a conductor fuse. The diode and the conductor fuse are coupled in series, with the select transistor coupl...