ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,217,795, issued on Feb. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).

"Memory and operating method thereof" was invented by Meng-Fan Chang (Taichung, Taiwan) and Yen-Cheng Chiu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory includes a memory device, a reading device and a feedback device. The memory device stores a plurality of bits. The reading device includes first and second reading circuits coupled to the memory device. The second reading circuit is coupled to the first reading circuit at a first node. The first and second reading cir...