ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,399,644, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TSING HUA UNIVERSITY (Hsinchu, Taiwan).
"Memory device" was invented by Jun-Shen Wu (Hsinchu, Taiwan), Chi-En Wang (Hsinchu, Taiwan) and Ren-Shuo Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided, including a memory array and a selection circuit. At least one first faulty cell and at least one second faulty cell that are in the memory array store data corresponding to, respectively, first and second fields of a floating-point number. The selection circuit identifies the at least one firs...