US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Sept. 23 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,317, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Jenn-Gwo Hwu (Taipei, Taiwan), Jen-Hao Chen (Chiayi County, Taiwan) and Kung-Chu Chen (Chiayi, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a sensing device, and a transistor. The sensing device includes a dielectric layer, a sensing pad, a first sensing electrode, and a second sensing electrode. The dielectric layer is over the substrate. The sensing pad is over and in c...