US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Oct. 14 for "Semiconductor device having 2D channel layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,279, issued on Oct. 14, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device having 2D channel layer" was invented by Yun-Yuan Wang (Kaohsiung, Taiwan), Chih-Hsiang Hsiao (Taoyuan, Taiwan), I-Chih Ni (New Taipei, Taiwan) and Chih-I Wu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a chalcogenide channel layer, a chalcogenide barrier layer, source/drain contacts, and a gate electrode. The chalcogenide channel layer is over the substrate. The chalcogenide barrier layer is over the chalcogenide channel layer. A ...