US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Nov. 4 for "Charge-coupled transistor with different-dielectric-thickness structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,776, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Charge-coupled transistor with different-dielectric-thickness structure" was invented by Jenn-Gwo Hwu (Taipei, Taiwan) and Tzu-Hao Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a dielectric structure, a gate electrode, and a drain electrode. The dielectric structure is over the substrate. The dielectric structure includes a first portion, a second portion, and a third portion. The first portion has a first equivalent oxide thickness. The se...