US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Nov. 18 for "Memory device adjusting reference voltage signal" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,943, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device adjusting reference voltage signal" was invented by Tao Chou (New Taipei, Taiwan), Hsin-Cheng Lin (Taipei, Taiwan), Jih-Chao Chiu (New Taipei, Taiwan) and Chee-Wee Liu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory array, a first reference voltage circuit, a first read voltage control circuit and a first write voltage control circuit. The first reference voltage circuit is configured to provide a first reference voltage signal having...