ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,541, issued on May 27, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).
"Magnetoresistive memory device and manufacturing method thereof" was invented by Zong-You Luo (Taoyuan, Taiwan), Ya-Jui Tsou (Taichung, Taiwan), Chee-Wee Liu (Taipei, Taiwan), Shao-Yu Lin (Taichung, Taiwan), Liang-Chor Chung (Hsinchu County, Taiwan) and Chih-Lin Wang (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conduct...