US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on March 11 for "Write assist circuit for memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,367, issued on March 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Write assist circuit for memory device" was invented by Chia-Che Chung (Hsinchu, Taiwan), Hsin-Cheng Lin (Taipei, Taiwan) and Chee-Wee Liu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device is provided. The device includes a memory cell and a first write assist circuit. The memory cell operates with a first supply voltage and a second supply voltage different from the first supply voltage. The first write assist circuit includes a first write assist switch and a second writ...