US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on March 11 for "Semiconductor device having doped work function metal layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,604, issued on March 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device having doped work function metal layer" was invented by Chih-Hsiung Huang (Kaohsiung, Taiwan), Chung-En Tsai (Hsinchu County, Taiwan), Chee-Wee Liu (Taipei, Taiwan), Kun-Wa Kuok (Hsinchu, Taiwan) and Yi-Hsiu Hsiao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a gate stack, and epitaxy structures. The substrate has a P-type region. The gate stack is over the P-type region of the substrate and includes a gate dielectr...