US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 29 for "Semiconductor device with improved source/drain contact and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,336, issued on July 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device with improved source/drain contact and method for forming the same" was invented by Shun-Siang Jhan (Kaohsiung, Taiwan), Ang-Sheng Chou (Hsinchu, Taiwan), I-Chih Ni (New Taipei, Taiwan) and Chih-I Wu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a 2-D semiconductor material layer over a substrate; forming source/drain contacts over source/drain regions of the 2-D semiconductor material layer; and forming a gate structure over a chann...