US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on July 1 for "Semiconductor device with oxide-based semiconductor channel" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,413, issued on July 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Semiconductor device with oxide-based semiconductor channel" was invented by Jih-Chao Chiu (New Taipei, Taiwan), Song-Ling Li (Taoyuan, Taiwan) and Chee-Wee Liu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a fin over a substrate, the fin comprising alternately stacking first oxide-based semiconductor layers and second oxide-based semiconductor layers, removing the second oxide-based semiconductor layers to form a plurality of spaces each between correspon...