US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Jan. 28 for "Gate-all-around transistor with strained channels" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,897, issued on Jan. 28, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Gate-all-around transistor with strained channels" was invented by Chung-En Tsai (Hsinchu County, Taiwan), Chia-Che Chung (Hsinchu, Taiwan), Chee-Wee Liu (Taipei, Taiwan), Fang-Liang Lu (New Taipei, Taiwan), Yu-Shiang Huang (New Taipei, Taiwan), Hung-Yu Yeh (Taichung, Taiwan), Chien-Te Tu (Hsinchu, Taiwan) and Yi-Chun Liu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device with a plurality of semiconductor channel layers. The semicon...