US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on Feb. 10 for "Metal halide resistive memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,337, issued on Feb. 10, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Metal halide resistive memory device and method for forming the same" was invented by Chia-Shuo Li (Miaoli County, Taiwan), Yu-Tien Wu (Taipei, Taiwan), Bo-You Chen (Tainan, Taiwan), I-Chih Ni (New Taipei, Taiwan) and Chih-I Wu (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a transistor over a substrate; and forming a resistive element over the transistor, in which forming the resistive element includes forming a bottom electrode electrically connected to...