US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING, NATIONAL TAIWAN UNIVERSITY on April 8 for "Memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,078, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan) and NATIONAL TAIWAN UNIVERSITY (Taipei, Taiwan).

"Memory device" was invented by Jenn-Gwo Hwu (Taipei, Taiwan), Bo-Jyun Chen (Taoyuan, Taiwan) and Kuan-Wun Lin (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a semiconductor substrate and a memory cell at a memory region of the semiconductor substrate. A memory cell includes a memory portion of the semiconductor substrate, a tunneling layer, a storage layer, a first electrode, and a second electrode. The tunneling layer is over the memory portion of th...