ALEXANDRIA, Va., June 9 -- United States Patent no. 12,288,801, issued on April 29, was assigned to TAIWAN SEMICONDUCTOR MANUFACTUING COMPANY Ltd. (Hsin-Chu, Taiwan).
"Semiconductor structure and method of manufacture" was invented by Ching-Hung Kao (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first dielectric layer, a conductive layer over the first dielectric layer, and a first electrode over a first portion of the conductive layer. A first thickness of the first portion of the conductive layer is greater than a second thickness of a second portion of the conductive layer not under the first electrode."
The patent was filed on Feb. 28, 2022, under App...