US Patent Issued to Taiwan Semiconductor Manfacturing on July 8 for "Spacer film scheme form polarization improvement" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,633, issued on July 8, was assigned to Taiwan Semiconductor Manfacturing Co. Ltd. (Hsinchu, Taiwan).

"Spacer film scheme form polarization improvement" was invented by Tzu-Yu Lin (Taoyuan, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip. The integrated chip includes a lower electrode disposed within a dielectric structure over a substrate. A ferroelectric data storage structure is disposed over the lower electrode and an upper electrode is disposed over the ferroelectric data storage structure. One or more stressed sidewall spacers are arranged on opposing s...