US Patent Issued to TAIWAN SEMICONDUCOTR MANUFACTURING on Sept. 23 for "Polysilicon design for replacement gate technology" (Taiwanese, Singaporean Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,333, issued on Sept. 23, was assigned to TAIWAN SEMICONDUCOTR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Polysilicon design for replacement gate technology" was invented by Harry-Hak-Lay Chuang (Singapore), Kong-Beng Thei (Hsin-Chu, Taiwan), Sheng-Chen Chung (Tainan, Taiwan), Chiung-Han Yeh (Tainan, Taiwan), Lee-Wee Teo (Singapore), Yu-Ying Hsu (Pingzhen, Taiwan) and Bao-Ru Young (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive poly...