US Patent Issued to Taiwan Semiconducor Manufacturing on Dec. 30 for "Method for fabricating a semiconductor device including etching nanostructures" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,952, issued on Dec. 30, was assigned to Taiwan Semiconducor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for fabricating a semiconductor device including etching nanostructures" was invented by Chia-Chien Kuang (Hsinchu, Taiwan), Wei-Lun Chen (Taipei, Taiwan), Tze-Chung Lin (Hsinchu, Taiwan) and Li-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device with substantially uniform gate regions and a method for forming the same. The method includes forming a fin structure on a substrate, the fin structure including one or more nanostructures. The method further includes removi...