ALEXANDRIA, Va., April 2 -- United States Patent no. 12,266,684, issued on April 1, was assigned to Taiwan Semicondcutor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"High density capacitor" was invented by Pei-Jen Wang (Nantou County, Taiwan), Ching-Hung Kao (Tainin, Taiwan), Tzy-Kuang Lee (Taichung, Taiwan), Meng-Chang Ho (Taichung, Taiwan) and Kun-Mao Wu (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a capacitor is disclosed. The method includes forming a portion of a metallization layer on a substrate, forming a via layer on the substrate, and forming a first electrode between the metallization layer and the via layer, where the first electrode is electrically connected ...